US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor memory devices and electronic devices including the semiconductor memory devices" (South Korean Inventors)

Posted On: 2026-09-01

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,651, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory devices and electronic ... Read More

US Patent Issued to Micron Technology on Sept. 1 for "Apparatus for small swing data transfer" (Japanese Inventor)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,652, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Apparatus for small swing data transfer" was invented by Ha... Read More

US Patent Issued to NORTHROP GRUMMAN SYSTEMS on Sept. 1 for "Leakage compensation circuit for content addressable memory (CAM) cell" (Maryland, New York Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,654, issued on Sept. 1, was assigned to NORTHROP GRUMMAN SYSTEMS Corp. (Falls Church, Va.). "Leakage compensation circuit for content addre... Read More

US Patent Issued to Micron Technology on Sept. 1 for "Redundancy and majority voting in a key-value data storage system using content addressable memory" (American, Italian Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,655, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Redundancy and majority voting in a key-value data storage ... Read More

US Patent Issued to Micron Technology on Sept. 1 for "Integrated circuitry, memory circuitry comprising strings of memory cells, and methods used in forming integrated circuitry" (Singaporean, American Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,656, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Integrated circuitry, memory circuitry comprising strings o... Read More

US Patent Issued to Micron Technology on Sept. 1 for "Memory device having tiers of memory cells and access line having multiple conductive regions" (Idaho, California Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,657, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device having tiers of memory cells and access line ... Read More

US Patent Issued to SK hynix on Sept. 1 for "Memory device and method of performing program operation" (South Korean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,658, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of performing program operation" ... Read More

US Patent Issued to Micron Technology on Sept. 1 for "Adaptively programming memory cells in different modes to optimize performance" (Idaho Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,659, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Adaptively programming memory cells in different modes to o... Read More

US Patent Issued to MACRONIX International on Sept. 1 for "Writing method, reading method and memory device for hiding data" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,660, issued on Sept. 1, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Writing method, reading method and memory devic... Read More

US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Memory systems and methods of controlling the same, and readable storage media" (Chinese Inventor)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,661, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory systems and methods of controlling the... Read More

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US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor memory devices and electronic devices including the semiconductor memory devices" (South Korean Inventors)

US Patent Issued to Micron Technology on Sept. 1 for "Apparatus for small swing data transfer" (Japanese Inventor)

US Patent Issued to NORTHROP GRUMMAN SYSTEMS on Sept. 1 for "Leakage compensation circuit for content addressable memory (CAM) cell" (Maryland, New York Inventors)

US Patent Issued to Micron Technology on Sept. 1 for "Redundancy and majority voting in a key-value data storage system using content addressable memory" (American, Italian Inventors)

US Patent Issued to Micron Technology on Sept. 1 for "Integrated circuitry, memory circuitry comprising strings of memory cells, and methods used in forming integrated circuitry" (Singaporean, American Inventors)

US Patent Issued to Micron Technology on Sept. 1 for "Memory device having tiers of memory cells and access line having multiple conductive regions" (Idaho, California Inventors)

US Patent Issued to SK hynix on Sept. 1 for "Memory device and method of performing program operation" (South Korean Inventors)

US Patent Issued to Micron Technology on Sept. 1 for "Adaptively programming memory cells in different modes to optimize performance" (Idaho Inventors)

US Patent Issued to MACRONIX International on Sept. 1 for "Writing method, reading method and memory device for hiding data" (Taiwanese Inventors)

US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Memory systems and methods of controlling the same, and readable storage media" (Chinese Inventor)